inchange semiconductor product specification isc website www.iscsemi.cn schottky barrier rectifier MBR3045 features dual rectifier conduction, positive center tap low power loss/high efficiency high current capability high surge capacity guarding for overvoltage protection for use in low voltage, high frequency inverters, free wheeling, and polarity pr otection applications absolute maximum ratings(t a =25 ) symbol parameter value unit v rrm dc blocking voltage 45 v i f(av) average rectified forward current t c = 105 30 a i fsm nonrepetitive peak surge current 8.3ms single half sine-wave superimposed on rated load conditions 275 a t j junction temperature 170 t stg storage temperature range -55~170 electrical characteristics (pulse test: pulse width 300 s,duty cycle 2%) symbol parameter conditions max unit v f maximum instantaneous forward voltage i f = 15a ; t c = 25 0.69 v i r maximum instantaneous reverse current v r = 45v, t c = 25 20 a
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